Toshiba’s new SiC MOSFET cuts on-resistance area by 58% for 1,200 V power stages in EV chargers

Toshiba has introduced the TW007D120E, a new 1,200 V trench-gate silicon carbide (SiC) MOSFET designed to enhance power supply systems in demanding applications such as electric vehicle (EV) chargers, energy storage, AI data centres, and photovoltaic inverters. The company has commenced shipping test samples of this device, which utilises a proprietary trench-gate structure. Unlike conventional planar designs, this architecture embeds gate electrodes within etched trenches in the semiconductor substrate, enabling significant improvements in performance. The innovative trench-gate design allows the TW007D120E to achieve a substantial reduction in on-resistance per unit area, cutting it by approximately 58% compared to Toshiba’s previous third-generation SiC MOSFET, the TW015Z120C. This reduction translates into lower conduction losses while also improving switching efficiency, with the device’s RDS(on) × Qgd figure of merit enhanced by around 52%. Key specifications include a 1,200 V drain-source breakdown voltage, a continuous drain current of 172 A at 25°C case temperature, and a typical on-resistance of 7.0 mΩ at a gate voltage of 15 V. In addition to electrical performance, the TW007D120E is designed for improved thermal management, housed in a QDPAK package that facilitates top-side cooling. This configuration allows heat to dissipate more effectively through the device’s surface rather than the circuit board, supporting higher power densities crucial for compact and efficient EV charging stations. The device operates with a relatively low gate drive voltage of 15-18 V, further optimising its efficiency and integration potential in power electronics systems. Looking ahead, Toshiba plans to begin mass production of the TW007D120E in the fiscal year 2026, with ambitions to extend the product line into automotive applications. This development signals Toshiba’s commitment to advancing SiC technology, which is increasingly vital for the electrification of transport and the expansion of renewable energy infrastructure. The new MOSFET’s improved efficiency and thermal performance could play a significant role in the next generation of high-power electric vehicle chargers and other critical power systems.