ROHM’s new 5th-gen EcoSiC devices cuts SiC MOSFET on-resistance 30%

ROHM Semiconductor has unveiled its 5th Generation EcoSiC silicon carbide (SiC) MOSFETs, which achieve a significant reduction in on-resistance—approximately 30% lower than the previous 4th Generation devices at a junction temperature of 175°C. This improvement comes without changes to chip size or breakdown voltage, indicating that advancements stem from refined device structure and manufacturing processes rather than geometry scaling. The reduction in on-resistance at elevated temperatures is particularly important for applications such as traction inverters, where devices operate under peak load and high thermal stress. The new EcoSiC devices are designed to enhance efficiency in electric vehicle (xEV) powertrains, onboard chargers (OBCs), DC-DC converters, and electric compressors. By lowering conduction losses during switching cycles, the 5th Generation MOSFETs enable either smaller packaging or increased continuous output from the same chip footprint, offering manufacturers greater flexibility in system design. ROHM’s 4th Generation SiC MOSFETs, introduced in 2020, have already seen widespread adoption in automotive and industrial sectors, and the latest iteration aims to build on this success with improved high-temperature performance. ROHM has a long-standing history in SiC technology, having commenced mass production of SiC MOSFETs in 2010. The company began shipping bare dies of the 5th Generation devices in 2025 and finalised full device development earlier this year in March 2026. Samples of discrete devices and modules are expected to be available from July 2026, with plans to expand the product range to include various breakdown voltages and packaging options. This development underscores ROHM’s commitment to advancing SiC technology to meet the growing demands of the electric mobility and industrial markets.